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| SI4936ADY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 5.9 4.9 rDS(on) (W) 0.036 @ VGS = 10 V 0.053 @ VGS = 4.5 V D TrenchFETr Power MOSFET D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 Ordering Information: SI4936ADY SI4936ADY-T1 (with Tape and Reel) N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 5.9 4.7 "30 1.7 2.0 1.3 Steady State Unit V 4.4 3.6 A 0.9 1.1 0.7 - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71132 S-31989--Rev. B, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 32 Maximum 62.5 110 40 Unit _C/W C/W 1 SI4936ADY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 5.9 A VGS = 4.5 V, ID = 4.9 A VDS = 15 V, ID = 5.9 A IS = 1.7 A, VGS = 0 V 30 0.032 0.042 15 0.8 1.2 0.036 0.053 1.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 5.9 A 13 2.3 2.0 6 14 30 5 30 12 25 60 10 60 ns 20 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D - Drain Current (A) 4V I D - Drain Current (A) 24 30 TC = - 55_C 25_C Transfer Characteristics 18 18 125_C 12 3V 12 6 6 2V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71132 S-31989--Rev. B, 13-Oct-03 SI4936ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.08 r DS(on) - On-Resistance ( W ) 1000 Capacitance 0.06 VGS = 4.5 V 0.04 VGS = 10 V C - Capacitance (pF) 800 Ciss 600 400 Coss Crss 0.02 200 0.00 0 6 12 18 24 30 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 5.9 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.9 A 1.4 6 r DS(on) - On-Resistance (W) (Normalized) 6 9 12 15 1.2 4 1.0 2 0.8 0 0 3 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 TJ = 150_C I S - Source Current (A) 10 0.08 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) ID = 5.9 A 0.06 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71132 S-31989--Rev. B, 13-Oct-03 www.vishay.com 3 SI4936ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 10 Power (W) 30 50 Single Pulse Power 40 20 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71132 S-31989--Rev. B, 13-Oct-03 |
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